PART |
Description |
Maker |
SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4 3-Phase Bridge Rectifier IGBT braking chopper
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Semikron International
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6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls 6,12 and 16 Amp Diffused Silicon Rectifier Diodes
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IRF[International Rectifier]
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S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1) Light modulation photo IC 光调制照片集成电
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Hamamatsu Photonics
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S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
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Hamamatsu Photonics
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S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
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Hamamatsu Photonics
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S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
1N4383 |
DIFFUSED-JUNCTION SILICON RECTIFIER
|
New Jersey Semi-Conductor Products, Inc.
|
U05G4B48 U05B4B48 U05J4B48 |
Silicon Diffused Type Rectifier Stack
|
GOOD-ARK[GOOD-ARK Electronics]
|
S5688G |
(S5688x) Rectifier Silicon Diffused Type
|
Toshiba Semiconductor
|
R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN 300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN 300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN 1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN 350 A, 2200 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 200 A, 1500 V, SILICON, RECTIFIER DIODE 1500 A, 1200 V, SILICON, RECTIFIER DIODE 125 A, 800 V, SILICON, RECTIFIER DIODE 150 A, 1200 V, SILICON, RECTIFIER DIODE 400 A, 200 V, SILICON, RECTIFIER DIODE 800 A, 3200 V, SILICON, RECTIFIER DIODE 350 A, 700 V, SILICON, RECTIFIER DIODE 400 A, 900 V, SILICON, RECTIFIER DIODE 100 A, 1500 V, SILICON, RECTIFIER DIODE 1000 A, 1500 V, SILICON, RECTIFIER DIODE 1000 A, 1700 V, SILICON, RECTIFIER DIODE 800 A, 3100 V, SILICON, RECTIFIER DIODE 250 A, 50 V, SILICON, RECTIFIER DIODE 800 A, 3600 V, SILICON, RECTIFIER DIODE 330 A, 500 V, SILICON, RECTIFIER DIODE
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Powerex, Inc. POWEREX INC
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BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa 200V NPN silicon transistot, diffused mesa TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五(巴西)总裁| 6A条一(c)|3 NPN SILICON TRANSISTORS DIFFUSED MESA 180V NPN silicon transistot, diffused mesa
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Cypress Semiconductor, Corp. List of Unclassifed Manufacturers ETC[ETC] Comset Semiconductors
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